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MP38 ? MP38A
Parameter
Test Conditions
(Note 1)
Min
MP38
Typ
Max
Min
MP38A
Typ
Max
Units
OUTPUT
VOLTAGE SWING
I O = 10A
±V S ˉ+8.8 ±V S ˉ+6.6
*
*
V
VOLTAGE SWING
±V B = ±V S ±10V,
I O = 10A
±V S ˉ+6.8
±V S ˉ+4
*
*
V
SETTLING TIME to .1%
SLEW RATE
CAPACITIVE LOAD
RESISTANCE
CURRENT, CONTINUOUS
A V = +1,10V step,
R L = 4?
A V = –10, C C = 100pF
Full temp range,
A V = +1
10
10
2.5
4
10
*
*
*
*
11
μS
V/μS
nF
?
A
POWER SUPPLY
VOLTAGE
Full temp range
±15
±75
±100
*
*
*
V
CURRENT, quiescent, boost
supply
CURRENT, quiescent, total
22
26
*
*
mA
mA
THERMAL
RESISTANCE, AC,
junction to case
(Note 3)
Full temp range,
F>60Hz
.9
*
°C/W
RESISTANCE, DC, junction to
case
Full temp range,
F<60Hz
1.2
*
°C/W
RESISTANCE,
junction to air
(Note 4)
Full temp range
12
*
°C/W
TEMPERATURE RANGE, case
Meets full range
specification
-40
+85
*
*
°C
NOTES: * The specification of MP38A is identical to the specification for MP38 in applicable column to the left.
1. Unless otherwise noted: T C = 25°C, R C = 100?, C C = 470pF. DC input specifications are ± value
given. Power supply voltage is typical rating. ±V B = ±V S .
2. Long term operation at the maximum junction temperature will result in reduced product life. Derate
internal power dissipation to achieve high MTTF. For guidance, refer to the heatsink data sheet.
3. Rating applies if the output current alternates between both output transistors at a rate faster than
60Hz.
4. The MP38 must be used with a heat sink or the quiescent power may drive the unit to junction tem-
peratures higher than 175°C.
CAUTION
The MP38 is constructed from MOSFET transistors. ESD handling procedures must be observed.
MP38U
3
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